Jun 20, 2006 The silicon-germanium heterojunction bipolar transistors built by the IBM-Georgia Tech team operated at frequencies above 500 GHz at 4.5 Kelvins
Jun 22, 2006 The silicon-germanium heterojunction bipolar transistors built by the IBM-Georgia Tech team operated at frequencies above 500 GHz at 4.5 Kelvins (451 degrees below zero Fahrenheit) - a temperature attained using liquid helium cooling. At room temperature, these devices operated at approximately 350 GHz.
Nov 10, 2021 Features. 110 GHz f T silicon germanium technology. High maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Low noise high linearity RF transistor. Target Applications. High linearity applications. LTE, cellular, UMTS. Medium output power applications. Wi-Fi / WLAN / WiMAX.
Feb 19, 2014 A silicon-germanium transistor at 798 gigahertz fMAX exceeded the previous speed record for silicon-germanium chips by about 200 GHz, report researchers.
110 GHz fT silicon germanium technology Optimal linearity for low current and high gain Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance Low current 10.8 mA
36 GHz submicron silicon waveguide germanium photodetector Shirong Liao, Ning-Ning Feng, Dazeng Feng, Po Dong, Roshanak Shafiiha, Cheng-Chih Kung, Hong Liang, Wei Qian, Yong Liu, Joan Fong, John E. Cunningham, Ying Luo, and Mehdi Asghari Author Information . Author Affiliations.
compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current, Opt. Express 19(25), 2489724904 (2011). 4. L. Chen and M. Lipson, Ultra-low capacitance and high speed germanium photodetectors on silicon, Opt. Express 17(10), 79017906 (2009). 5.
42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide Laurent Vivien 1, Johann Osmond 1, Jean-Marc Fdli 2, Delphine Marris-Morini 1, Paul Crozat 1, Jean-Franois Damlencourt 2, Eric Cassan 1, Y.Lecunff 2, Suzanne Laval 1 1 Institut dElectronique Fondamentale (IEF), CNRS UMR 8622, Bt. 220, Universit Paris-Sud XI, F-91405 ORSAY
Silicon germanium programmable circuits for gigahertz applications J.-R. Guo, C. You, M. Chu, P.F. Curran, J. Diao, B. Goda, P. Jin, R.P. Kraft and J.F. McDonald Abstract Implementation of a silicon germanium (SiGe) eld programmable gate array (FPGA) has been described. The recongurable basic cell (BC) that evolved from the Xilinx XC6200 has
Mar 04, 2011 Silicon germanium was an innovative, new semiconductor that used established technology, resulting in enormous cost savings over other materials. SiGe chips emerged as a variation of the stalwart complementary metal-oxide semiconductor (CMOS) transistors found in
Nov 23, 2021 Making silicon-germanium core fibers a reality. November 23, 2021. Published by Ajisebutu Doyinsola. Credit Nancy Bazilchuk. Glass fibres do everything from connecting us to the internet to enabling keyhole surgery by delivering light through medical devices such as endoscopes. But as versatile as todays fiber optics are, scientists around ...
Feb 19, 2014 The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by
24 GHz, 60 GHz and 120 GHz High-Frequency ICs Here you will find high-frequency ICs for various applications. Our producst are receivers, transceivers and LNAs (Low Noise Amplifiers) designed mainly for use in ISM bands 24 GHz , 60 GHz and 120 GHz and in
By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.
IQE offers the industrys broadest range of RF epitaxial wafer products for wireless communication, radar, and RF heating applications across the radio frequency spectrum spanning 1 MHz to 300 GHz. Our III-V epitaxial products are manufactured from GaAs, GaN, and InP, complemented by our Group IV silicon and germanium semiconductor materials.
Nov 22, 2021 To fabricate the germanium-on-silicon photodetector, a germanium layer is deposited and patterned on top of the silicon waveguide. ... M. N.
Nov 18, 2021 By contrast, germanium photodiodes, which are available on the major silicon photonics platforms, typically show bandwidths in the range of 5070 GHz (refs. 4 , 5 , 6 , 7 ).
Jun 20, 2006 A research team from IBM and the Georgia Institute of Technology has demonstrated the first silicon-germanium transistor able to operate at frequencies above 500 GHz.
May 23, 2011 36 GHz submicron silicon waveguide germanium photodetector. May 2011 Optics Express 19 ... 42 GHz p.i.n germanium photode tector integrated in a
Nov 18, 2021 The demonstration of a germanium-based photodiode with a 3 dB bandwidth of 265 GHz and compatibility with silicon photonics and CMOS fabrication offers a
Abstract We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at 1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-
The BGT24MTR12 is a Silicon Germanium MMIC for signal ge neration and reception, o perating from 24.0 to 24.25 GHz. It is based on a 24 GHz fundamental voltage controlled oscillator.
Mar 04, 2011 In 1996, IBM made its first internal investment in silicon germanium, establishing the SiGe Product Development and Manufacturing group and two new telecommunications design centers. In 2002, IBM shipped its 100,000,000th SiGe chip.
Sep 22, 2021 Silicon Radar is your reliable partner for the supply of standard circuits in frequency range from 24 GHz up to 120 GHz. More about us ASIC design of MMICs up to 300 GHz and with high bandwidth are part of our service portfolio.
This thesis presents the design and characterization of a monolithic 5-6 GHz Silicon Germanium (SiGe) inductor-capacitor ( LC) tank voltage controlled oscillator (VCO) with tunable polyphase outputs. Circuits were designed and fabricated using the Motorola 0.4 m CDR1 SiGe BiCMOS process, which has four interconnect metal
Silicon and germanium alloys have been formed for the first time by heating powdered mixtures of 75%Si and 25%Ge in just 2 min in the H field in a single mode 2?45 GHz microwave cavity. As is well known, alloy formation in conventionally heated silicongermanium mixtures is difficult, even
The silicon/germanium system is appealing for microwave photonics applications due to the high thermal conductivities of silicon and germanium relative to InP and ... bandwidth of 33 GHz, responsivity at 1550 nm of 0.7A/W, and a -1dB compression current at 30 GHz of 2.1 mA. D. ESIGN
32 GHz Germanium Bipolar Phototransistors on Silicon Photonics Ryan Going*1, Christopher Keraly1, Tae Joon Seok1, Eli Yablonovich1, and Ming C. Wu1 1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 *rwgoingberkeley.edu Abstract We present designs and simulations for a 32 GHz f T 3-terminal germanium bipolar
38 GHz (Virot et al., 2013)), while devices utilizing dilute absorption profiles had ... a number of ways to integrate germanium and silicon, but selective area growth by chemical vapor deposition is the most common for waveguide photodiodes (Michel et al., 2010). The Si/Ge interface is conductive, and for vertical diodes, one contact
Nov 09, 2020 The achieved 3 dB bandwidth of 1.7 GHz is an order of magnitude greater than the previous reported integrated silicon-germanium demonstration
36 GHz submicron silicon waveguide germanium photodetector. We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 m silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge.
The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular
Sep 18, 2008 Silicon germanium fast, quiet, and powerful. CMOS (complementary-metal-oxide-semiconductor) processes have consistently surprised the semiconductor industry. CMOS prices decreased and CMOS speeds increased, a scenario that primarily benefits digital-IC designers. A digital-IC designer does not care that a part is running on 1V or less, as long ...
Feb 20, 2014 But silicon-germanium changes this situation. In SiGe technology, small amounts of germanium are introduced into silicon wafers at the atomic scale during the standard manufacturing process, boosting performance substantially. The result is cutting-edge silicon germanium devices such as the IHP Microelectronics 800 GHz transistor.
Abstract Backside-illuminated germanium photodiodes fabricated on silicon substrate with two Si x Ge 1-x buffer layers are reported. At 1.3 mum, the responsivity was 0.62 A/W for reverse bias greater than 0.1 V. The 3-dB bandwidth was 21.5 GHz at 10-V reverse bias,
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